Silicon Photonic Modulators for High Speed Optical Analog Links

C. Lacava,D.J. Thomson,K. Li,I. Demirtzioglou,A. Shakoor,D. J. Richardson,F. Zhang,G. T. Reed,P. Petropoulos

DOI: https://doi.org/10.1364/ps.2017.pw2d.3

2017-01-01

Abstract:We discuss recent progress on the design of silicon photonic modulators for high speed digital and analog optical links and their implementation using advanced modulation formats (including PAM and DMT).

What problem does this paper attempt to address?

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
High-Baudrate SiP and InP Modulators for Data Center Interconnects

Oskars Ozolins,Armands Ostrovskis,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Mahdieh Joharifar,Richard Schatz,Michael Koenigsmann,Yuchuan Fan,Urban Westergren,Haïk Mardoyan,Lu Zhang,Sandis Spolitis,Xianbin Yu,Markus Gruen,Vjaceslavs Bobrovs,Hadrien Louchet,Xiaodan Pang

DOI: https://doi.org/10.23919/softcom58365.2023.10271574

2023-01-01

Abstract:The booming internet traffic sets highly challenging requirements for high-speed computing where low latency is required. This leads to a choice of intensity modulation and direct detection system with the highest baudrate possible. Furthermore, record baudrate supporting modulators will be the key technology for future optical interconnect applications. Therefore, we demonstrated silicon photonics and indium phosphide modulators at highest possible sysmbolrate.
Development of Silicon Photonic Devices for Optical Interconnects

Xi Xiao,ZhiYong Li,Tao Chu,Hao Xu,XianYao Li,Anastasia Nemkova,Xiong Kang,YuDe Yu,JinZhong Yu

DOI: https://doi.org/10.1007/s11431-012-5120-2

2013-01-01

Science China Technological Sciences

Abstract:Silicon photonic devices based on complementary-metal-oxide-semiconductor (CMOS) compatible technologies have shown attractive performances on very-large-scale monolithic optoelectronic integration, high speed modulation and switching, and efficient off-chip optical coupling. This paper presents the recent progress on fast silicon optical modulation, wavelength-insensitive optical switching and efficient optical coupling techniques in our group. Several CMOS-compatible silicon optical couplers with different structures have been developed, showing the highest coupling efficiency of 65%. Broadband silicon-based optical switches with sub-nanosecond switching on-off time are experimentally realized. Silicon modulators with novel PN junctions are demonstrated with the speed up to 50 Gb s −1 .
High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
High Baud Rate Transmission with Silicon Photonic Modulators

Fan Zhang,Lei Zhang,Xiaoke Ruan,Fan Yang,Hao Ming,Yanping Li

DOI: https://doi.org/10.1109/jstqe.2021.3055582

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We review high baud rate operation of silicon photonic modulators with emphasis on short-reach and metro-haul applications. The current status of both devices and digital signal processing are discussed. The basic design of a typical carrier-depletion-based dual-drive traveling-wave Mach-Zehnder modulator (TW-MZM) is studied by simulation. Based on an all-silicon TW-MZM, we report the transmission experiments of high baud rate single sideband 4-ary pulse amplitude modulation (PAM-4) signals with linear equalization and artificial neural network based equalization, respectively. Our work indicates all-silicon modulators can address the requirements of future optical communication systems operating at 100 Gbaud.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Silicon Optical Modulators for Data Transmission in Different Wavelength Bands.

David J. Thomson,Ke Li,Wei Cao,David Hagan,Shenghao Liu,Fanfan Meng,Milos Nedeljkovic,Ali Z. Khokhar,Callum George Littlejohns,Weiwei Zhang,Martin Ebert,Abdul Shakoor,Bigeng Chen,Shaif-Ul Alam,Junjia Wang,Xia Chen,Lorenzo Mastronardi,Mehdi Banakar,Lee Crudgington,Frederic Y. Gardes,Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Hong Wang,Peter Wilson,Goran Z. Mashanovich,Andy Knights,Graham T. Reed

DOI: https://doi.org/10.1109/icton.2019.8840302

2019-01-01

Abstract:High-speed and low-power silicon optical modulators are key in realising low cost photonic circuits for data transmission purposes. Depending on the application, different wavelength bands are preferred and therefore designs of optical modulator, which operate in these bands, are required. Here we present our recent work on silicon optical modulators at 1310, 1550, 2000 and 3800 nm wavelengths.
Highly Efficient Silicon Michelson Interferometer Modulators

Xianyao Li,Xi Xiao,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2013.2238625

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We present the first high-speed silicon Michelson interferometer (MI) modulator with two 500 μm-long phase shifters. The utilized MI optical structure is an enhanced Mach-Zehnder interferometer (MZI) with both arms incorporated with reflective mirrors. The light in the MI travels back and forth along the phase shifting waveguides and therefore doubles the effective length of light-carrier interaction. Improvement on the modulation efficiency is experimentally demonstrated. Our MI modulator shows high efficiency with a low figure of merit VπLπ of 0.72 V·cm~0.91V·cm under the bias of -1 V~-6V. High-speed modulations are performed at 25 Gbit/s and 30 Gbit/s with the extinction ratio of 8 dB and 6.5 dB, respectively, showing great potential in the future optical interconnects.
Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Shuojian Zhang,Yimin Xia,Jialin Cheng,Jian‐Jun He

DOI: https://doi.org/10.1117/12.2686639

2023-01-01

Abstract:Silicon-organic hybrid (SOH) modulators are promising as they have large bandwidth, high modulation efficiency and low optical loss. In this paper, we present the optical and electrical design and simulation of a high-speed travelling wave SOH modulator with multiple interplay parameters. We also implement the electro-optical co-optimization to delve into the influence of the key design parameters and propose the design guideline. The results demonstrate a modulator with 3 dB bandwidth of 72 GHz, modulation efficiency of 1.26 Vmm and optical loss less than 1 dB.
Accurate High-Speed Eye Diagram Simulation of Silicon-Based Modulators

Ching Eng Png,Vivek Dixit,Soon Thor Lim,Er-Ping Li

DOI: https://doi.org/10.1117/12.2002696

2013-01-01

Abstract:Optical modulation is one of the key determinants to the operating speed of a network. In this work, we report an accurate methodology to study high-speed eye diagram from electrical and optical simulation data of individual modulators. The methodology constitutes electrical parameters such as capacitance, conductance and transitioning times to model time response and effective complex refractive index from optical simulations of phase shifter arms and in turn model the phase change and resultant loss induced by each arm. This methodology is suitable for interferometer-based optical devices and has been applied to silicon-based depletion mode modulators at 10-, 40-Gbps.
Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

Juthika Basak,Ling Liao,Ansheng Liu,Doron Rubin,Yoel Chetrit,Hat Nguyen,Dean Samara-Rubio,Rami Cohen,Nahum Izhaky,Mario Paniccia

DOI: https://doi.org/10.1155/2008/678948

2008-06-16

Advances in Optical Technologies

Abstract:This paper describes the recent advances made in silicon optical modulators employing the free carrier dispersion effect, specifically those governed by majority carrier dynamics. The design, fabrication, and measurements for two different devices are discussed in detail. We present an MOS capacitor-based modulator delivering 10 Gbps data with an extinction ratio of 4 dB and a pn-diode-based device with high-speed transmission of 40 Gbps and bandwidth greater than 30 GHz. Device improvements for achieving higher extinction ratios, as required for certain applications, are also discussed. These devices are key components of integrated silicon photonic chips which could enable optical interconnects in future terascale processors.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

赵勇,江晓清,杨建义,王明华

2009-01-01

Abstract:In order to realize the practical application of the Silicon-based optoelectronic devices, the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N, Bipolar Mode Field Effect Transistor(BMFET), Metal Oxide Semiconductor(MOS) and PN junction are reviewed. And our work in design and fabrication of Silicon-based CMOS photonic devices is reported. The devices fabricated by commercial CMOS process have expected results. The extinction ratios of an optical modulator, a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8~12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
Silicon Photonic Network-on-chip and Enabling Components

Ting Hu,Chen Qiu,Ping Yu,LongZhi Yang,WanJun Wang,XiaoQing Jiang,Mei Yang,Lei Zhang,JianYi Yang

DOI: https://doi.org/10.1007/s11431-012-5112-2

2013-01-01

Abstract:As the transistor’s feature scales down and the integration density of the monolithic circuit increases continuously,the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed,low-power and low-latency data transmission for on-and off-chip communications.Optical technology is poised to resolve these problems.Due to the complementary metal-oxide-semiconductor（CMOS） compatible process,silicon photonics is the leading candidate technology.Silicon photonic devices and networks have been improved dramatically in recent years,with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade.This paper reviews the recent developments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field.
Silicon Photonic Mach–Zehnder Modulator Architectures for on Chip PAM-4 Signal Generation

Alireza Samani,Eslam El-Fiky,Mohamed Morsy-Osman,Rui Li,David Patel,Thang Hoang,Maxime Jacques,Mathieu Chagnon,Nicols Abada,David V. Plant,Nicolas Abadia

DOI: https://doi.org/10.1109/jlt.2019.2908655

IF: 4.7

2019-07-01

Journal of Lightwave Technology

Abstract:Alireza Samani, Eslam El-Fiky, Mohamed Morsy-Osman, Rui Li, David Patel, Thang Hoang, Maxime Jacques, Mathieu Chagnon, Nicolás Abadía, David V. Plant<br/>Four level pulse amplitude modulation (PAM-4) has become the modulation format of choice to replace on–off keying (OOK) for the 400 Gb/s short reach optical communications systems. In this paper, we investigate the possible modifications to conventional Mach–Zehnder modulator ... [J. Lightwave Technol. 37, 2989-2999 (2019)]

engineering, electrical & electronic,optics,telecommunications
Silicon modulators for advanced optical communications

Zhiping Zhou,Tiantian Li,Dan Wang,Junlong Zhang,Fan Zhang,Xingjun Wang,Hequan Wu

DOI: https://doi.org/10.1364/acpc.2014.af1a.6

2014-01-01

Abstract:Silicon Mach-Zehnder modulators were used in IM-DD advanced optical communications. 6.25 Gbaud Nyquist-16, 32 and 64-Quadrature Amplitude Modulation optical signals were generated. 160 km transmission of 100 Gb/s WDM Nyquist-16QAM signals were also demonstrated.
A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

Chi Xiong,Douglas M. Gill,Jonathan E. Proesel,Jason S. Orcutt,Wilfried Haensch,William M. J. Green

DOI: https://doi.org/10.1364/OPTICA.3.001060

2016-08-27

Abstract:Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimization of silicon traveling wave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.

Optics
High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu,Xi Xiao,Xianyao Li,Yingtao Hu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015093

IF: 3.8

2012-01-01

Optics Express

Abstract:A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V pi L pi = 1.5 similar to 2.0 V.cm and low doping-induced loss of similar to 10 dB/cm by applying a relatively low doping concentration of 2 x 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 mu m. (c) 2012 Optical Society of America
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
Terahertz All-Optical Modulation in a Silicon-Polymer Hybrid System

Michael Hochberg,Tom Baehr-Jones,Guangxi Wang,Michael Shearn,Katherine Harvard,Jingdong Liu,Baoquan Chen,Zhengwei Shi,Rhys Lawson,Phil Sullivan,Alex K. Y. Jen,Larry Dalton,Axel Scherer

DOI: https://doi.org/10.1038/nmat1719

2006-06-28

Abstract:Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the ultrafast mechanism of this modulation functions at the optical frequency through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained in this device. By integrating optical polymers through evanescent coupling to high-mode-confinement silicon waveguides, we greatly increase the effective nonlinearity of the waveguide for cross-phase modulation. The combination of high mode confinement, multiple integrated optical components, and high nonlinearities produces all-optical ultrafast devices operating at continuous-wave power levels compatible with telecommunication systems. Although far from commercial radio frequency optical modulator standards in terms of extinction, these devices are a first step in development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.

Optics

Silicon Photonic Modulators for High Speed Optical Analog Links

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

High-Baudrate SiP and InP Modulators for Data Center Interconnects

Development of Silicon Photonic Devices for Optical Interconnects

High-speed Silicon Modulators for the 2 Μm Wavelength Band

High Baud Rate Transmission with Silicon Photonic Modulators

30 Gbps high optical bandwidth silicon modulator

Silicon Optical Modulators for Data Transmission in Different Wavelength Bands.

Highly Efficient Silicon Michelson Interferometer Modulators

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

Accurate High-Speed Eye Diagram Simulation of Silicon-Based Modulators

Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

Silicon Photonic Network-on-chip and Enabling Components

Silicon Photonic Mach–Zehnder Modulator Architectures for on Chip PAM-4 Signal Generation

Silicon modulators for advanced optical communications

A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Terahertz All-Optical Modulation in a Silicon-Polymer Hybrid System