Abstract:Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si 0.18 Ge 0.82 superlattices (SLs) with a total thickness of 16 μ m corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si 0.18 Ge 0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices.

Characterization of a Ge_1−x−ySi_ySn_x/Ge_1−xSn_x multiple quantum well structure grown by sputtering epitaxy

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics

Depth-dependent Photoluminescence Characteristic of GeSn/SiGeSn Multi-Quantum Wells

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Study of SiGeSn/GeSn/SiGeSn Quantum Well Towards All Group-IV-Optoelectronics

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se Multi‐quantum Well Structures for Intersubband Devices Grown by MBE

Optical properties of Ge/Si quantum dot superlattices

GSMBE Growth and Characterization of Strained-Layer MQWs in a P-i-N Configuration

GSMBE growth and DCXRD study on InxGa1-xAs/InP strained-layer MQWs in P-i-N configuration

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells

Mbe Growth And Characterization Of High-Quality Gainassb/Algaassb Strained Multiple Quantum Well Structures