Abstract:Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with and polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

Dual Optical Marker Raman Characterization Of Strained Gan-Channels On Aln Using Aln/Gan/Aln Quantum Wells And N-15 Isotopes

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

High Precision Determination of the Elastic Strain of InGaN/GaN Multiple Quantum Wells

Structural Characterization and Elastic Strain of InGaN/GaN Multiple Quantum Wells

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Strain in Algan Layer Studied by Rutherford Backscattering/Channeling and X-Ray Diffraction

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Improving the Emission Efficiency of MBE-grown GaN/AlN QDs by Strain Control

Phonon Modes in AlGaN Alloy with AlGaN/GaN MQW Interlayer