Dual Optical Marker Raman Characterization Of Strained Gan-Channels On Aln Using Aln/Gan/Aln Quantum Wells And N-15 Isotopes

meng qi,guowang li,vladimir protasenko,pei zhao,jai verma,bo song,satyaki ganguly,mingda zhu,zongyang hu,xiaodong yan,a m mintairov,huili grace xing,debdeep jena

DOI: https://doi.org/10.1063/1.4906900

IF: 4

2015-01-01

Applied Physics Letters

Abstract:This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics. (C) 2015 AIP Publishing LLC.