Comment on ‘‘radiative and Nonradiative Recombination of Bound Excitons in GaP:N. I. Temperature Behavior of Zero-Phonon Line and Phonon Sidebands of Bound Excitons’’ and ‘‘ Radiative and Nonradiative Recombination of Bound Excitons in GaP:N. IV. Formation of Phonon Sidebands of Bound Excitons’’

Weikun Ge,Yong Zhang,Donglin Mi,Jiansheng Zheng,Bingzhang Yan,Boxi Wu

DOI: https://doi.org/10.1103/physrevb.46.5004

1992-01-01

Abstract:We point out that the experimental data on the temperature dependence of the LO-phonon sidebands of ${\mathrm{NN}}_{4--6}$ in a recent paper by X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] are incorrectly analyzed, and that the theory in a closely related paper by Q. Hong, X. Zhang, and K. Dou [Phys. Rev. B 41, 2931 (1990)] is inadequate for explaining the LO-phonon sideband structure and temperature behavior of N-related bound excitons in GaP.