The Exchange Coupling of a NiO/FeNi Bilayer with Interdiffused Interface

Q Y Xu,G Ni,H Sang,Y W Du
DOI: https://doi.org/10.1088/0953-8984/13/22/302
2001-01-01
Journal of Physics Condensed Matter
Abstract:A series of NiO(110 A)/FeNi(tF A)/Cu(24 A)/FeNi(tF A) spin-valve-structure samples were fabricated using ion beam sputtering. The exchange bias HE of the pinned FeNi layer increases as the FeNi thickness tF decreases. For tF<70 A, however, HE decreases with the decrease of tF. The coercivity HCp varies as 1/tF at room temperature. The M-H loops show that the magnetic moment of the pinned FeNi layer is smaller than that of the free FeNi layer, indicating that an FeNi layer of about 20 A is interdiffused with the NiO layer leading to a drop of the magnetic moment of the pinned FeNi layer. The interdiffusion between the FeNi and NiO layers may account for the decrease of the exchange bias HE for tF<70 A.
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