Short-Range Exchange Coupling in the Afm/Fm Bilayers with A Spacer Layer

MH Li,GH Yu,K He,FW Zhu,WY Lai
DOI: https://doi.org/10.7498/aps.51.2854
IF: 0.906
2002-01-01
Acta Physica Sinica
Abstract:The NiFe (I) /FeMn/Bi/NiFe (II) films were prepared by magnetron sputtering. The Bi thickness dependences of H-ex between antiferromagnetic FeMn film and both ferromagnetic NiFe (I) film and NiFe (II) film were studied systematically. With the increase of the thickness of the Bi film, the exchange bias field H-ex2 between the FeMn and NiFe (I) is almost invariable; however H-ex2 between FeMn and NiFeII decreases dramatically. H-ex2 decreases from 6.925 to 0.876kA(.)m(-1) while Bi film thickness is larger than 0.6 nm. Bi atoms do not stay fully at the interface between FeMn and NiFe (II) but at least partially segregate onto the NiFe (II) surface.
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