Abstract:Under electrical pumping conditions, high-efficiency Si-based near-infrared light generation and amplification on a chip have long been pursued for future optical interconnection technology. However, the overall performance of Si-based near-infrared electroluminescence (EL) devices, including the overall efficiency, turn-on voltage and stability under operational conditions, can rarely meet the requirements of monolithic optoelectronic integration. In this work, we designed a confined crystallization growth strategy for fabricating metal oxide quantum dot (QD) arrays embedded in Si-based films as sensitizers of Er3+ ions. Through the precise control of particle size and number density of QD sensitizers, the near-infrared photoluminescence (PL) emission of Er3+ ions can be enhanced by more than three orders of magnitude. More significantly, such hierarchical control over the regular arrangement of QD arrays not only considerably enhances the resonance energy transfer efficiency, but also offers an effective conduction path for carrier transport. Therefore, the corresponding near-infrared EL device exhibits a decreased turn-on voltage of 4.5 V, a high external quantum efficiency of 0.7%, and a long operational lifetime of more than 1000 hours, making this device superior to most Si-based on-chip near-infrared EL devices. This well-controlled metal oxide QD array represents an ideal sensitizer to effectively promote the EL emission of rare earth ions and reduce the turn-on voltage. Meanwhile, the analysis of the carrier transport mechanism paves the way for future research into resonance energy transfer under electrical pumping conditions.

Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor

Spectral Broadening of a Single Er$^{3+}$ Ion in a Si Nano-Transistor

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Photoionisation Detection of a Single Er3 + Ion with Sub-100-ns Time Resolution

Zeeman and hyperfine interactions of a single <SUP>167</SUP>Er<SUP>3+</SUP> ion in Si

Erbium‐Hyperdoped Silicon Quantum Dots: A Platform of Ratiometric Near‐Infrared Fluorescence

Indistinguishable telecom band photons from a single Er ion in the solid state

Frequency Tunable, Cavity-Enhanced Single Erbium Quantum Emitter in the Telecom Band

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Controlling single rare earth ion emission in an electro-optical nanocavity

Stark Tuning of Telecom Single-Photon Emitters Based on a Single Er3+

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Tunable Quantum Dot Arrays As Efficient Sensitizers for Enhanced Near-Infrared Electroluminescence of Erbium Ions.

Narrowband Diffuse Thermal Emitter Based on Surface Phonon Polaritons

Stark tuning of telecom single-photon emitters based on a single Er$^{3+}$

Millisecond electron spin coherence time for erbium ions in silicon