Abstract:Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available in the solid-state. Erbium-doped cerium oxide (Er:CeO$_2$) is a particularly promising platform for such a quantum memory, as it combines the telecom-wavelength (~1.5 $\mu$m) 4f-4f transition of erbium, a predicted long electron spin coherence time supported by CeO$_2$, and is also near lattice-matched to silicon for heteroepitaxial growth. In this work, we report on the epitaxial growth of Er:CeO$_2$ thin films on silicon using molecular beam epitaxy (MBE), with controlled erbium concentration down to 2 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO$_2$ host structure, and characterize the spin and optical properties of the embedded Er$^{3+}$ ions. In the 2-3 ppm Er regime, we identify EPR linewidths of 245(1) MHz, optical inhomogeneous linewidths of 9.5(2) GHz, optical excited state lifetimes of 3.5(1) ms, and spectral diffusion-limited homogenoeus linewidths as narrow as 4.8(3) MHz in the as-grown material. We test annealing of the Er:CeO$_2$ films up to 900 deg C, which yields modest narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%. We have also studied the variation of the optical properties as a function of Er doping and find that the results are consistent with the trends expected from inter-dopant charge interactions.

Spectral Broadening of a Single Er$^{3+}$ Ion in a Si Nano-Transistor

Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Photoionisation Detection of a Single Er3 + Ion with Sub-100-ns Time Resolution

Zeeman and hyperfine interactions of a single <SUP>167</SUP>Er<SUP>3+</SUP> ion in Si

Indistinguishable telecom band photons from a single Er ion in the solid state

Frequency Tunable, Cavity-Enhanced Single Erbium Quantum Emitter in the Telecom Band

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Controlling single rare earth ion emission in an electro-optical nanocavity

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

Stark Tuning of Telecom Single-Photon Emitters Based on a Single Er3+

Erbium‐Hyperdoped Silicon Quantum Dots: A Platform of Ratiometric Near‐Infrared Fluorescence

Stark tuning of telecom single-photon emitters based on a single Er$^{3+}$

Optical coherence properties of Kramers' rare-earth ions at the nanoscale for quantum applications

Millisecond electron spin coherence time for erbium ions in silicon

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Rare-Earth Molecular Crystals with Ultra-narrow Optical Linewidths for Photonic Quantum Technologies

Optical and microstructural characterization of Er3+ doped epitaxial cerium oxide on silicon

Optical and microstructural characterization of Er$^{3+}$ doped epitaxial cerium oxide on silicon