Abstract:The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications under development. So far, it has been accomplished for only two defect centres in crystalline solids: phosphorus dopants in silicon, for which electrical read-out based on a single-electron transistor is used, and nitrogen-vacancy centres in diamond, for which optical read-out is used. A spin read-out fidelity of about 90 per cent has been demonstrated with both electrical read-out and optical read-out; however, the thermal limitations of the former and the poor photon collection efficiency of the latter make it difficult to achieve the higher fidelities required for quantum information applications. Here we demonstrate a hybrid approach in which optical excitation is used to change the charge state (conditional on its spin state) of an erbium defect centre in a silicon-based single-electron transistor, and this change is then detected electrically. The high spectral resolution of the optical frequency-addressing step overcomes the thermal broadening limitation of the previous electrical read-out scheme, and the charge-sensing step avoids the difficulties of efficient photon collection. This approach could lead to new architectures for quantum information processing devices and could drastically increase the range of defect centres that can be exploited. Furthermore, the efficient electrical detection of the optical excitation of single sites in silicon represents a significant step towards developing interconnects between optical-based quantum computing and silicon technologies.

Photoionisation Detection of a Single Er3 + Ion with Sub-100-ns Time Resolution

Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon

Photo-Ionisation Spectra of Single Erbium Centres by Charge Sensing with A Nano Transistor

Spectral Broadening of a Single Er$^{3+}$ Ion in a Si Nano-Transistor

Observing Er3+ Sites in Si with an in Situ Single-Photon Detector

Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection

Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor

Single Site Optical Spectroscopy of Coupled Er3+ Ion Pairs in Silicon

In-Situ Single-Photon Detection of Er Sites in Si

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

Detection of single ions in a nanoparticle coupled to a fiber cavity

Optical Addressing of an Individual Erbium Ion in Silicon

Frequency Tunable, Cavity-Enhanced Single Erbium Quantum Emitter in the Telecom Band

Erbium‐Hyperdoped Silicon Quantum Dots: A Platform of Ratiometric Near‐Infrared Fluorescence

Indistinguishable telecom band photons from a single Er ion in the solid state

Indistinguishable telecom band photons from a single erbium ion in the solid state

Zeeman and hyperfine interactions of a single <SUP>167</SUP>Er<SUP>3+</SUP> ion in Si

Controlling single rare earth ion emission in an electro-optical nanocavity

Detection, spectroscopy and state preparation of a single praseodymium ion in a crystal