Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Investigation on the Degradations of Parallel-Connected 4H-Sic MOSFETs under Repetitive UIS Stresses

A Deep Insight into the Impact of Bipolar Degradations on Avalanche Robustness of 4H-Sic MOSFETs

Avalanche Capability Degradation of the Parallel-Connected SiC MOSFETs

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Degradation Investigations on Asymmetric Trench SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stress

A Deep Insight into the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Unclamped Inductive Switching Stresses

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Single-Pulse Avalanche Failure Characterization of Single and Paralleled SiC MOSFETs

Suppression Effect of Split-Gate Structure on Repetitive Avalanche Stress Induced Degradation for SiC MOSFETs

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Finite Element Modelling and Experimental Characterisation of Paralleled SiC MOSFET Failure under Avalanche Mode Conduction

Experimental Investigation on Avalanche Robustness of SiC MOSFETs in the Aging Process

Repetitive-avalanche-induced Electrical Degradation and Optimization for 1.2kv 4H-Sic MOSFETs