Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Controllable graphene/black phosphorus van der Waals heterostructure tunneling device

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

High-quality sandwiched black phosphorus heterostructure and its quantum oscillations

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

Tunable Schottky barrier in van der Waals heterostructures of graphene and hydrogenated phosphorus carbide monolayer: first-principles calculations

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Protecting black phosphorus with selectively adsorbed graphene quantum dot layers

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Surface and interface control of black phosphorus

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures

Interfacial contact and electronic properties in the heterojunction based on black phosphorus and borophene

Graphene binding on black phosphorus enables high on/off ratios and mobility