Abstract:In order to realize high efficient magnetization switching in magnetic tunnel junction (MTJ), several potential mechanisms have been realized as the interplay effect to MTJ device, such as the interaction between spin orbit torque-spin transfer torque (STT) and voltage-controlled magnetic anisotropy (VCMA)-STT. The interplay mechanisms have been experimentally explored with improved switching energy efficiency comparing with traditional STT method. Considering the requirement of mixed-precision memory, we propose a novel write-only in-memory computing paradigm based on interplay bitwise operation in two terminal or three terminal MRAM bit-cell, which aims to reduce the layout overhead of peripheral computing circuits, as well as to eliminate read decision failure in the procedure of in-memory computing. Specifically, the proposed write-only bitwise in-memory computing is demonstrated with OR, AND, XOR, full adder operations. Four nonvolatile approximate full adders (AxFAs) are proposed and implemented in different MRAM bit-cells. The AxFAs can be easily reconfigured into memory units with simple connections. Image processing applications are used to demonstrate the in-memory computing, include FA, XOR operation. Comparing with traditional sensing based approach, more than 80% energy reduction is obtained using the proposed interplay writing-only in memory computing with approximation setup. A 61.4% energy reduction is achieved using VCMA mechanism interaction based XOR functions.

In-MRAM Computing Elements with Single-Step Convolution and Fully Connected for BNN/TNN

Commodity Bit-Cell Sponsored MRAM Interaction Design for Binary Neural Network

Area and Energy Efficient Short-Circuit-Logic-Based STT-MRAM Crossbar Array for Binary Neural Networks

A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

In-MRAM Computing Based on Complementary-Sensing Time-Based Readout Circuit Using Hybrid VGSOT-MTJ/GAA-CNTFET

An In-Memory Computing Multiply-and-accumulate Circuit Based on Ternary STT-MRAMs for Convolutional Neural Networks.

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Sparsity-Oriented MRAM-Centric Computing for Efficient Neural Network Inference

SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration

Exploring STT-MRAM Based In-Memory Computing Paradigm with Application of Image Edge Extraction

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

Computing in-memory with cascaded spintronic devices for AI edge

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

A Novel In-memory Computing Scheme Based on Toggle Spin Torque MRAM.

A CFMB STT-MRAM-Based Computing-in-Memory Proposal with Cascade Computing Unit for Edge AI Devices

Accelerating Low Bit-Width Deep Convolution Neural Network in MRAM.

PXNOR-BNN: In/With Spin-Orbit Torque MRAM Preset-XNOR Operation-Based Binary Neural Networks.

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

Interplay Bitwise Operation in Emerging MRAM for Efficient In-memory Computing

33.4 A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference