Abstract:Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM) 1 promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by performing AI computation directly within RRAM, thus eliminating power-hungry data movement between separate compute and memory 2,3,4,5 . Although recent studies have demonstrated in-memory matrix-vector multiplication on fully integrated RRAM-CIM hardware 6,7,8,9,10,11,12,13,14,15,16,17 , it remains a goal for a RRAM-CIM chip to simultaneously deliver high energy efficiency, versatility to support diverse models and software-comparable accuracy. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. Here, by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM—a RRAM-based CIM chip that simultaneously delivers versatility in reconfiguring CIM cores for diverse model architectures, energy efficiency that is two-times better than previous state-of-the-art RRAM-CIM chips across various computational bit-precisions, and inference accuracy comparable to software models quantized to four-bit weights across various AI tasks, including accuracy of 99.0 percent on MNIST 18 and 85.7 percent on CIFAR-10 19 image classification, 84.7-percent accuracy on Google speech command recognition 20 , and a 70-percent reduction in image-reconstruction error on a Bayesian image-recovery task.

Computing in-memory with cascaded spintronic devices for AI edge

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

An 8-Bit in Resistive Memory Computing Core with Regulated Passive Neuron and Bitline Weight Mapping

A CFMB STT-MRAM-Based Computing-in-Memory Proposal with Cascade Computing Unit for Edge AI Devices

Sparsity-Oriented MRAM-Centric Computing for Efficient Neural Network Inference

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

Commodity Bit-Cell Sponsored MRAM Interaction Design for Binary Neural Network

SpinCIM: spin orbit torque memory for ternary neural networks based on the computing-in-memory architecture

A compute-in-memory chip based on resistive random-access memory

RAP-CIM: Reliable Time Accumulation and Efficient Pipeline Computing in Memory with Spintronics for Neural Networks

DS-CIM: A 40nm Asynchronous Dual-Spike Driven, MRAM Compute-In-Memory Macro for Spiking Neural Network

Time-Domain Computing in Memory Using Spintronics for Energy-Efficient Convolutional Neural Network

RRAM Computing-in-Memory Using Transient Charge Transferring for Low-Power and Small-Latency AI Edge Inference

Exploring STT-MRAM Based In-Memory Computing Paradigm with Application of Image Edge Extraction

A 28-Nm 135.19 TOPS/W Bootstrapped-SRAM Compute-in-Memory Accelerator with Layer-Wise Precision and Sparsity

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

Area and Energy Efficient Short-Circuit-Logic-Based STT-MRAM Crossbar Array for Binary Neural Networks

NAND-SPIN-based processing-in-MRAM architecture for convolutional neural network acceleration

On-Device Continual Learning with STT-Assisted-SOT MRAM Based In-Memory Computing