Abstract:Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM) 1 promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by performing AI computation directly within RRAM, thus eliminating power-hungry data movement between separate compute and memory 2,3,4,5 . Although recent studies have demonstrated in-memory matrix-vector multiplication on fully integrated RRAM-CIM hardware 6,7,8,9,10,11,12,13,14,15,16,17 , it remains a goal for a RRAM-CIM chip to simultaneously deliver high energy efficiency, versatility to support diverse models and software-comparable accuracy. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. Here, by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present NeuRRAM—a RRAM-based CIM chip that simultaneously delivers versatility in reconfiguring CIM cores for diverse model architectures, energy efficiency that is two-times better than previous state-of-the-art RRAM-CIM chips across various computational bit-precisions, and inference accuracy comparable to software models quantized to four-bit weights across various AI tasks, including accuracy of 99.0 percent on MNIST 18 and 85.7 percent on CIFAR-10 19 image classification, 84.7-percent accuracy on Google speech command recognition 20 , and a 70-percent reduction in image-reconstruction error on a Bayesian image-recovery task.

RRAM Computing-in-Memory Using Transient Charge Transferring for Low-Power and Small-Latency AI Edge Inference

An 8-Bit in Resistive Memory Computing Core with Regulated Passive Neuron and Bitline Weight Mapping

A Robust 8-Bit Non-Volatile Computing-in-Memory Core for Low-Power Parallel MAC Operations.

A 28nm Hybrid 2T1R RRAM Computing-in-Memory Macro for Energy-efficient AI Edge Inference

A 28-Nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference

An RRAM-Based Digital Computing-in-Memory Macro with Dynamic Voltage Sense Amplifier and Sparse-Aware Approximate Adder Tree

A 1T2R1C ReRAM CIM Accelerator with Energy-Efficient Voltage Division and Capacitive Coupling for CNN Acceleration in AI Edge Applications.

A compute-in-memory chip based on resistive random-access memory

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.

An ADC-less RRAM-based Computing-in-Memory Macro with Binary CNN for Efficient Edge AI

C-RRAM: A Fully Input Parallel Charge-Domain RRAM-based Computing-in-Memory Design with High Tolerance for RRAM Variations

A CFMB STT-MRAM-Based Computing-in-Memory Proposal with Cascade Computing Unit for Edge AI Devices

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control

A Heterogeneous Microprocessor for Intermittent AI Inference Using Nonvolatile-SRAM-based Compute-In-Memory

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

HiT-CIM: A High-Throughput Compute-In-Memory SRAM Architecture with Simultaneous Weight Loading/Computing and Balance Capabilities

Compute-in-Memory with 6T-RRAM Memristive Circuit for Next-Gen Neuromorphic Hardware

An 8.8 TFLOPS/W Floating-Point RRAM-Based Compute-in-Memory Macro Using Low Latency Triangle-Style Mantissa Multiplication

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors