Resistive Switching Behavior and Mechanism of Multilayer MoS2 Memtransistor under Control of Back Gate Bias and Light Illumination

Deng Wen,Wang Li-Sheng,Liu Jia-Ning,Yu Xue-Ling,Chen Feng-Xiang
DOI: https://doi.org/10.7498/aps.70.20210750
IF: 0.906
2021-01-01
Acta Physica Sinica
Abstract:Memtransistor is a new multi-terminal device which combines the properties of memristor and field effect transistor and simultaneously realizes information storage and processing. In this paper, the multilayer MoS2 is prepared by micromechanical exploration method, then the back gate MoS2 memtransistor with field effect transistor structure is fabricated, and the resistive switching characteristics and mechanism of the device under electric field, light field and their synergistic regulation are systematically studied. The experimental results show that the multilayer MoS2 memtransistor has excellent bipolar resistance behavior and good cycle durability. Under the control of gate voltage, the switching ratio of the device can be tuned in a range of 100-105, up to 1.56 × 105, which indicates that the device has a strong gating effect. Under the control of light illumination, the resistance characteristics of the device are strongly dependent on the incident wavelength. When photoelectric synergistic regulation is performed, the device displays excellent four-terminal control capability, and the switching ratio is enhanced up to 4.8 × 104. The mechanism of resistive switching characteristics can be attributed to the changes of charge capture state and Schottky barrier height at the interface between MoS2 and metal electrodes, and the continuous photoconductance effect caused by photogenerated carriers in MoS2 channel.
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