Modeling of FET Flicker Noise and Impact of Technology Scaling

C. Chen,Y. Liu,S. Cao,R. Dutton,J. Sato-Iwanaga,A. Inoue,H. Sorada
2007-01-01
Abstract:In this paper, TCAD simulation tools have been developed and adopted to investigate the flicker noise performance of field effect transistors (FETs) based on advanced high-k gate oxide or SiGe/Si hetero-structure technologies. In particular, an improved impedance field method has been implemented to account for the unified carrier number-mobility fluctuation mechanisms, which are found to be important to explain the gate bias dependence of drain current noise in p-type SiGe/Si hetero-structure devices. Numerical simulations are carefully correlated with measured data. In addition, an improved compact model has been developed to account for the body bias effect that is evident in SiGe/Si devices.
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