Abstract:We report the high-powered laser modification of the chemical, physical, and structural properties of the two-dimensional (2D) van der Waals material GaSe. Our results show that contrary to expectations and previous reports, GaSe at the periphery of a high-power laser beam does not entirely decompose into Se and Ga2O3. In contrast, we find unexpectedly that the Raman signal from GaSe gets amplified around regions where if was not expected to exist. Atomic force microscopy (AFM), dielectric force microscopy (DFM), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX) results show that laser irradiation induces the formation of nanoparticles. Our analyses demonstrate that, except for a fraction of Ga2Se3, these nanoparticles still belong to the GaSe phase but possess different electrical and optical properties. These changes are evidenced in the increased Raman intensity attributed to the near-resonance conditions with the Raman excitation laser. The elemental analysis of nanoparticles shows that the relative selenium content increased to as much as 70% from a 50:50 value in stoichiometric GaSe. This elemental change is related to the formation of the Ga2Se3 phase identified by Raman spectroscopy at some locations near the edge. Further, we exploit the localized high-power laser processing of GaSe to induce the formation of Ag-GaSe nanostructures by exposure to a solution of AgNO3. The selective reaction of AgNO3 with laser-irradiated GaSe gives rise to composite nanostructures that display photocatalytic activity originally absent in the pristine 2D material. The photocatalytic activity was investigated by the transformation of 4-nitrobenzenethiol to its amino and dimer forms detected in situ by Raman spectroscopy. This work improves the understanding of light-matter interaction in layered systems, offering an approach to the formation of laser-induced composites with added functionality.

Photo-oxidation Dynamics in GaSe Flakes Probed Through Temporal Evolution of Raman Spectroscopy

Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy

Effect of Illumination and Se Vacancies on Fast Oxidation of Ultrathin Gallium Selenide.

Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe

Assembly of Multisurfaced Van der Waals Layered Compound GaSe via Thermal Oxidation

Effects of oxygen contamination on monolayer GeSe: A computational study

Effect Of Photo-Oxidation On Photobleaching Of Gese2 And Ge2se3 Films

Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation

Defect-Induced Doping and Chemisorption of O 2 in Se Deficient GaSe Monolayers

Revealing the Origin of PL Evolution of InSe Flake Induced by Laser Irradiation

Oxidation Mechanism and Protection Strategy of Ultrathin Indium Selenide: Insight from Theory

Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure

Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals

Patterning GaSe by High-Powered Laser Beams.

Ultrafast damage dynamics and ablation mechanism of GaSe induced by femtosecond laser irradiation

Defects-induced oxidation of two-dimensional β-In2S3 and its optoelectronic properties

Snapshots of Ambient Aging in 2D-Layered GaSe

Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation

Interference Effect on Photoluminescence Intensity in GaSe Up to 200 Layers

The Raman Enhancement Effect on a Thin GaSe Flake and Its Thickness Dependence

High-Resolution X-Ray Photoelectron Spectroscopy Study of Photo-Oxidation of Amorphous Oxy-Chalcogenide Films