Interference Effect on Photoluminescence Intensity in GaSe Up to 200 Layers

Sufeng Quan,Yingying Wang,Yao Liang,Jie Jiang,Bo Zhong,Kai Yu,Hong Zhang,Guangfeng Kan

DOI: https://doi.org/10.1021/acs.jpcc.0c00844

2020-01-01

The Journal of Physical Chemistry C

Abstract:Atomically layered GaSe has been receiving significant research interest due to its fascinating electronic and optical properties, which hold great promise for future electronics and optics. In this work, GaSe flakes up to 200 layers (L) with varying color contrasts are fabricated and transferred onto a SiO2/Si substrate. The photoluminescence (PL) of the GaSe flakes with different thicknesses is systematically studied, and the intensity features can be accurately captured when including an interference effect. It is found that multilayer GaSe exhibits a stronger PL intensity compared with monolayer MoS2, which makes it a promising candidate in the fabrication of light-emitting devices. By constructing a multilayer structure consisting of alternate low (SiO2, nd = 1/4 lambda) and high-index material (Si, nd = 1/4 lambda) as a supporting substrate, theoretically, it is found that the PL intensity of 120 L GaSe flakes is enhanced similar to 4 times compared with the normally used SiO2/Si substrate. This multilayer design not only increases the PL intensity in GaSe but also is applicable to other two-dimensional materials, e.g., MoS2 flakes. The chemical instability of GaSe in air makes protecting layers, e.g., polydimethylsiloxane (PDMS), BN, and Al2O3, highly needed to avoid the degradation of GaSe in air. Theoretically, it is found that the PL intensity of GaSe flakes also changes periodically with an increase of the thickness of the protecting layer. The thickness of the protecting layer will affect the PL intensity in GaSe flakes, which has not been fully addressed yet. Our work fulfills the requirements of understanding in a qualitative way the performance of GaSe thin-film optical devices.