Photoluminescence and Raman investigation of stability of InSe and GaSe thin films

O. Del Pozo-Zamudio,S. Schwarz,J. Klein,R. C. Schofield,E. A. Chekhovich,O. Ceylan,E. Margapoti,A. I. Dmitriev,G. V. Lashkarev,D. N. Borisenko,N. N. Kolesnikov,J. J. Finley,A. I. Tartakovskii

DOI: https://doi.org/10.48550/arXiv.1506.05619

2015-06-18

Abstract:Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study the stability of InSe (indium selenide) and GaSe (gallium selenide) thin films in air. Specifically, the author uses photoluminescence (PL) and Raman spectroscopy techniques to explore the changes in the optical properties of these two materials' thin films over time when they are exposed to air at room temperature.

### Research Background and Problem Description

1. **Application Prospects of Layered III - Chalcogenides**
- Layered III - chalcogenides (such as InSe and GaSe) have broad application potential in the fields of two - dimensional (2D) materials, nanoelectronics, and optoelectronics because of their direct band gaps and tunable optoelectronic properties.
- These materials can be used to fabricate van der Waals heterostructures to realize various functional devices, such as light - emitting diodes (LEDs).

2. **Environmental Stability Problem**
- Previous studies have shown that many layered materials exhibit instability when exposed to air. For example, materials such as black phosphorus, MoTe₂, and NbSe₂ are easily degraded in air.
- Therefore, understanding the stability of InSe and GaSe in air is crucial for their practical applications.

### Main Research Content

- **Experimental Methods**
- Use micro - photoluminescence (µPL) and micro - Raman spectroscopy techniques to measure InSe and GaSe thin films with thicknesses ranging from 9 to 75 nanometers.
- During the measurement, the samples are placed in air between two optical measurements, and the changes in their photoluminescence and Raman signals over time are recorded.

- **Research Findings**
- **GaSe Thin Films**
- After being exposed to air for 24 hours, the photoluminescence intensity of GaSe thin films with a thickness of 10 - 25 nanometers decreases by more than 50%, and the films with a thickness of 48 - 75 nanometers also show a similar decreasing trend after 72 hours.
- The Raman signal decreases by 10 times within a week, indicating that significant chemical changes have occurred in the surface layer of the GaSe thin films.
- The estimated erosion rate of the surface layer of the GaSe thin films is 0.14 ± 0.05 nm/hour.
- **InSe Thin Films**
- In contrast, the photoluminescence intensity of InSe thin films decreases by less than 20% within 100 hours, and the Raman signal hardly changes.
- This indicates that InSe thin films are relatively stable to oxygen and moisture in the air.

- **Solutions**
- By encapsulating GaSe thin films with dielectric materials such as SiO₂ or SiₓNᵧ, their stability can be significantly improved, and their lifespan can be extended to several months, thus overcoming the environmental degradation problem.

### Conclusions

This study shows that GaSe thin films will undergo significant degradation when exposed to air, while InSe thin films show better stability. In order to ensure the performance of GaSe thin films in practical applications, protective measures such as encapsulation need to be taken. These research results provide an important reference for future device design based on these materials.