Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device
M. Thesberg,Z. Stanojevic,O. Baumgartner,C. Kernstock,D. Leonelli,M. Barci,X. Wang,X. Zhou,H. Jiao,G. L. Donadio,D. Garbin,T. Witters,S. Kundu,H. Hody,R. Delhougne,G. Kar,M. Karner
DOI: https://doi.org/10.1016/j.sse.2022.108504
2022-11-11
Abstract:Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change materials as well as their extreme conductivity dependence on both electric field and temperature into a set of self-consistently-solved thermoelectric and phase-field partial-differential equations. However, demonstrations of the ability of such models to match actual experimental results are rare. In addition, such PCM devices also require a so-called selector device - such as an Ovonic Threshold Switching (OTS) device - in series for proper memory operation. However, monolithic simulation of both the PCM and OTS selector device in a single simulation is largely absent from the literature, despite its potential value for material- and design-space explorations. It is the goal of this work to first characterize a PCM device in isolation against experimental data, then to demonstrate the qualitative behavior of a simulated OTS device in isolation and finally to perform a single monolithic simulation of the PCM + OTS device within the confines of a commercially available TCAD solver: GTS Framework.
Mesoscale and Nanoscale Physics,Materials Science,Applied Physics