Abstract:GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of GaN power transistors require special treatment. In this work we review a unique and critical property of GaN power transistors, the dynamic threshold voltage (V th). GaN power transistors feature a p-GaN gate structure, while the gate metal contacts the p-GaN layer through a Schottky junction. This unique p-GaN gate structure is distinctively different from the silicon metal–oxide–semiconductor gate structure in that the p-GaN layer is actually a floating region without direct electrical contact to the external electrodes of the device. The floating p-GaN layer enables a charge storage process during the switching operation of a p-GaN gate high-electron-mobility transistor. Through carefully designed experiments, the strong correlation between charge storage and the dynamic V th shift has been revealed; this also serves as an approach to accurately predict the dynamic V th during switching operation. The influence of the dynamic V th on power switching applications is discussed. For example, with a positive dynamic V th shift, the reverse conduction voltage of a GaN power transistor is significantly increased, adding to the power loss. This positive V th shift also demands a sufficiently high gate drive voltage to ensure that the GaN power transistor can be fully turned on, which reduces the safety margin for the gate reliability of the device. To design a GaN based power switching circuit, accurate simulation of the device/circuit characteristics is necessary. Circuit simulations that do not consider the dynamic V th lead to a large deviation from the measurement circuit characteristics. We demonstrate that by incorporating the dynamic V th into the circuit model this deviation can be effectively eliminated.

A SPICE-Compatible Equivalent-Circuit Model of Schottky Type P-Gan Gate Power HEMTs with Dynamic Threshold Voltage

Incorporating the Dynamic Threshold Voltage into the SPICE Model of Schottky-Type P-Gan Gate Power HEMTs

Dynamic Interplays of Gate Junctions in Schottky-type P-Gan Gate Power HEMTs During Switching Operation

Dynamic Threshold Voltage in $P$-Gan Gate HEMT

Dynamic $v_{\mathrm{th}}$ in $P$-Gan Gate Power HEMTs and Its Impacts Upon Power Switching Circuits

Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs

An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs with P-Gan Gate

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -Gan Gate HEMTs

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

A Physics-Based Empirical Model of Dynamic I OFF under Switching Operation in P -Gan Gate Power HEMTs

Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs

Characterization of Dynamic $i_{\text{off}}$ in Schottky-Type $P$-Gan Gate HEMTs

Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type P-Gan Gate HEMT Biased at High VDS

Maximizing the Performance of 650-V P-Gan Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ under Switching Operation in Schottky-Type P-Gan Gate HEMTs

Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type P-Gan Gate HEMTs

An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters

E-mode P-Gan Gate HEMT with P-Fet Bridge for Higher VTH and Enhanced VTH Stability