Abstract:As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors (MKIDs) are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detectors is one of the key performance indicators. Here we give a detailed introduction to a noise power spectrum analysis method which can perform accurate and effcient noise spectrum analysis in a wide frequency range for kinetic inductance detectors. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting appropriate frequency resolutions for different frequency bands. We use this method to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micro-fabrication processes. We deposite a 25 nm thick aluminum film on high-resistivity silicon substrate for one device, while place silicon nitride (SiN x ) films on both the top and bottom of the aluminum film for another device. It is found that the frequency noise of the device with double silicon nitride films is approximately 25% to 50% of the bare aluminum device. Based on this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor (IDC) designs. We investigate the noise properties of these devices at different microwave driven powers and bath temperatures, and the experimental results show typical two-level system (TLS) noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detectors, and also paves the way to develop low-noise aluminum kinetic inductor detectors for terahertz imaging, photon-counting and energyresolving applications.

Characterization of the Quasiparticle Lifetime of Microwave Kinetic Inductance Detector

Characterization of an 8×8 Al Microwave Kinetic Inductance Detector Array

Characterization of Distributed and Lumped-Element THz MKIDs

Characterization Of A 0.35 Thz Aluminum 64-Pixel Mkid Array

Design and Performance of Hafnium Optical and Near-IR Kinetic Inductance Detectors

Development of an $$8\times 8$$ 8 × 8 CPW Microwave Kinetic Inductance Detector (MKID) Array at 0.35 THz

High Quality Factor Platinum Silicide Microwave Kinetic Inductance Detectors

Characterization of the Kinetic Inductance Fraction of NbTiN MKIDs

Development of Microwave Kinetic Inductance Detectors for a THz On-Chip Spectrometer

Noise Spectrum Analysis of Superconducting Kinetic Inductance Detectors

Thin film dielectric microstrip kinetic inductance detectors

Characterization of Kinetic Inductance and Sensitivity in Superconducting MKIDs with Varied Aluminum Film Thicknesses

Position and energy-resolved particle detection using phonon-mediated microwave kinetic inductance detectors

Pixel Position Recognition and Imaging of MKID Array Based on LED Dot Matrix Radiation

An 8×8 CPW MKIDs Developed at 0.35THz

A measurement method for responsivity of microwave kinetic inductance detector by changing power of readout microwaves

Investigation of reflection-based measurements of microwave kinetic inductance detectors in the optical bands

Ultraviolet, Optical, and Near-IR Microwave Kinetic Inductance Detector Materials Developments

A 25-micron single photon sensitive kinetic inductance detector

Significant noise improvement in a Kinetic Inductance Phonon-Mediated detector by use of a wideband parametric amplifier