Abstract:The emergence of magnetic transition metal dichalcogenides has significantly advanced the development of valleytronics due to the spontaneous breaking of time-reversal symmetry and space-inversion symmetry. However, the lack of regulation methods has prevented researchers from exploring their potential applications. Herein, we propose to use strain engineering to control the spin-valley coupling in the sliding ferroelectric bilayer 2H-VX2 (X = S, Se, Te). Four multiferroic states are constructed by combining the sliding ferroelectricity and antiferromagnetism in the R-stacking bilayer VX2, where the spin and valley polarizations are coupled together from the layer-dependent spin-polarized band structures. By applying a small external strain or pressure on the out-of-plane van der Waals direction, we predicted that there is an antiferromagnetic to magnetic transition in the bilayer VX2, leading to the interesting spin-polarized and chiral circularly polarized radiation at K+ and K- valleys, similar to those found in the magnetic monolayer. To comprehend the coupling between various degrees of freedom in these multiferroic systems, we have developed an effective k·p model. This model unveils a linear relationship between the electric polarization generated by interlayer sliding and the energy difference of the valence band maximum at K+ and K- valleys. Thus, providing an alternate method to measure the electric polarization in the sliding ferroelectrics. Based on the strong coupling between the strain, spin-valley, and electric polarization, it is likely to use the strain to control the interesting emerging properties of 2H-VX2 such as the anomalous valley Hall effect.

Effect of Strain Engineering on Magnetism-Induced Valley Splitting in WSe2 Based on the WSe2/CrSe2 Heterojunction

Effect of strain engineering on magnetism-induced valley splitting in WSe 2 based on the WSe 2 /CrSe 2 heterojunction

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure

Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure

Controllable Enormous Valley Splitting in Janus WSSe on CrN Monolayer

Enhanced Valley Splitting in Monolayer WSe2 by Phase Engineering.

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Strain-tunable Valley Polarization and Localized Excitons in Monolayer WSe2.

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Enhanced valley splitting of WSe2 in twisted van der Waals WSe2/CrI3 heterostructures

Enhanced Valley Splitting of WSe 2 in Twisted Van Der Waals WSe 2 /cri 3 Heterostructures

Magnetic Proximity Effect and Tunable Valley Splitting in 2D CrGeTe3/MTe2 (M = Mo, W) Van Der Waals Heterostructures

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Manipulation of Valley-Pseudospin in 2D WTe2/CrI3 Van Der Waals Heterostructure by Magnetic Proximity Effect

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS 2

Probing Magnetic-Proximity-effect Enlarged Valley Splitting in Monolayer WSe 2 by Photoluminescence

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Spatial Variations of Valley Splitting in Monolayer Transition Metal Dichalcogenide

Enhanced Valley Polarization in WSe 2 /YIG Heterostructures Via Interfacial Magnetic Exchange Effect

Strain Engineering the Spin-Valley Coupling of the R-stacking Sliding Ferroelectric Bilayer 2H-VX2 (X = S, Se, Te)