Abstract:Carbon nanotubes are regarded promising building blocks for the future nanoelectronics. High performance transistors and integrated circuits based on semiconducting CNT thin films, e.g., CMOS type 4-bit adder, CNT computer, flexible sensor etc., have been reported. These progresses demonstrate the CNT transistor technology is being pushed to practical application. For real circuits applications, high Ion/Ioff ratio with low Ioff for a transistor are required in high speed and low power consumption integrated circuits. However, the switching behavior of most reported CNT thin film transistors are not good enough. Due to the intrinsic ambipolarity of CNTs, the Ioff values are usually higher than hundreds of nano Ampe and the Ion/Ioff ratio is decreased to less than 102 at relatively high source/drain bias voltages (e.g. 1V). Though the switching behavior of the FETs based on individual CNTs can be improved by either special design of the device geometry or chemical doping, these methods do not work well in CNT thin film transistors. In this work, we improved the performance of CNT thin film transistors by combining the asymmetric gate design and chemical doping. In this way, the Ioff was suppressed while the Ion was increased at the mean time. Thus the Ion/Ioff ratio was increased by ~2 orders of magnitude when compared with normally designed top-gate device. Moreover, the devices showed better subthreshold swing (SS) and the threshold voltage (Vth) was closer to zero than normal devices. These improvements are benefit to more complicated circuits design, and our method is applicable for the emerging nanodevices.

Design Optimization of Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron-Hole Bilayer

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Single-event-transient Effect in Nanotube Tunnel Field-Effect Transistor with Bias-Induced Electron–hole Bilayer

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Electrostatic Engineering of Nanotube Transistors for Improved Performance

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

High performance tunnel field-effect transistor by gate and source engineering.

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

In-Built N+ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage