Abstract:We report a new nBn photodetector (nBn-PD) design based on the InAlSb/AlSb/InAlSb/InAsSb material systems for mid-wavelength infrared (MWIR) applications. In this structure, delta-doped compositionally graded barrier (δ-DCGB) layers are suggested, the advantage of which is creation of a near zero valence band offset in nBn photodetectors. The design of the δ-DCGB nBn-PD device includes a 3 μm absorber layer (n-InAs 0.81 Sb 0.19 ), a unipolar barrier layer (AlSb), and 0.2 μm contact layer (n-InAs 0.81 Sb 0.19 ) as well as a 0.116 μm linear grading region (InAlSb) from the contact to the barrier layer and also from the barrier to the absorber layer. The analysis includes various dark current contributions, such as the Shockley–Read–Hall (SRH), trap-assisted tunneling (TAT), Auger, and Radiative recombination mechanisms, to acquire more precise results. Consequently, we show that the method used in the nBn device design leads to diffusion-limited dark current so that the dark current density is 2.596 × 10 −8 A/cm 2 at 150 K and a bias voltage of − 0.2 V. The proposed nBn detector exhibits a 50% cutoff wavelength of more than 5 μm, the peak current responsivity is 1.6 A/W at a wavelength of 4.5 μm and a − 0.2 V bias with 0.05 W/cm 2 backside illumination without anti-reflective coating. The maximum quantum efficiency at 4.5 μm is about 48.6%, and peak specific detectivity ( D *) is of 3.37 × 10 10 cm⋅Hz 1/2 /W. Next, to solve the reflection concern in this nBn devices, we use a BaF 2 anti-reflection coating layer due to its high transmittance in the MWIR window. It leads to an increase of almost 100% in the optical response metrics, such as the current responsivity, quantum efficiency, and detectivity, compared to the optical response without an anti-reflection coating layer.

AlxIn1-xAsySb1-y Digital Alloy Nbn Photodetectors

Demonstration of Infrared Nbn Photodetectors Based on the AlInAsSb Digital Alloy Materials System

Infrared Al0.15InAsSb Digital Alloy Nbn Photodetectors

Ultrahigh-performance superlattice mid-infrared nBn photodetectors at high operating temperatures

Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Au/SnS2/Al Schottky Structure for High Detectivity and Low Dark Current Visible Light Detector

Design of a high-sensitivity extended mid-wave infrared InAsSb-based nBn photodetector by utilizing barrier band engineering technique: an outstanding device for biosensing applications

Low dark current Sb-based short-wavelength infrared photodetector

Self-Powered SnS1- xSe x Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range

High Performance Photodetector Based on CdS/CdS0.42Se0.58 Nanobelts Heterojunction

A Back-Illuminated Al0.42 Ga0.58 N/Al0.40 Ga0.60 N Heterojunction P-I-n Solar-Blind UV Photodetector

Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

InP-based GaAsSb/AlGaAsSb/T2SL barrier-type low-bias tunable dual-band NIR/eSWIR photodetectors

Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature ALD for Self-Powered Photodetector

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Ultrahigh-performance photodetectors based on low-dimensional Cs2AgBiBr6/CdS heterojunction

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

High performance photodetector based on CdS/CdS0.42Se0.58nanobelts heterojunction.

Bulk Defect-Mediated Absorption Sub-Bandgap All-Silicon Photodetector with Low Dark Current Density at Ambient Temperatures