Demonstration of Infrared Nbn Photodetectors Based on the AlInAsSb Digital Alloy Materials System

Dekang Chen,Renjie Wang,J. Andrew McArthur,Xingjun Xue,Andrew H. Jones,Seth R. Bank,Joe C. Campbell
DOI: https://doi.org/10.1063/5.0058462
IF: 4
2021-01-01
Applied Physics Letters
Abstract:We report an nBn photodetector based on the AlInAsSb digital alloy materials system, which has the advantage of a near-zero valence band offset. These photodetectors have achieved 28% external quantum efficiency, dark current densities of 2.6 × 10−3 A/cm2 at 300 K and 1.8 × 10−9 A/cm2 at 100 K with −0.5 V bias, and detectivity of 1.7 × 1010 Jones at room temperature under 2 μm wavelength illumination.
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