Abstract:Oxygen vacancies are engineered in sputter‐deposited HfO2 films by regulating the phase and self‐assembled nanochannels with varying substrate temperature and subsequently enhance the control over conductive filament dynamics. The oxygen vacancy concentration is found to be maximum at 300 °C through the evolution of monoclinic phase, enabling stable multilevel resistive switching behavior in Pt/HfO2/Ag devices for neuromorphic applications. A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag+ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

Multilevel Switching in Mg-doped HfOx Memristor Through the Mutual-Ion Effect

Multilevel switching in Mg-doped HfO x memristor through the mutual-ion effect

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Sub-10 Nm Ta Channel Responsible For Superior Performance Of A Hfo2 Memristor

Controlling the digital-to-analog switching in HfO 2 -based memristors via modulating the oxide thickness

Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices

Dual-Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfO x Devices

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

HfOx/AlOy Superlattice‐Like Memristive Synapse

Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition.

Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Homo-layer hafnia-based memristor with large analog switching window

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

HfAlO-based Ferroelectric Memristors for Artificial Synaptic Plasticity