Development of MEMS Capacitive Mirror Structure with CMOS Compatible Process.

Wei Liu,Gang Liu,Bing He,Jie Zhang,Hanlin Qin,Shuai Yuan
DOI: https://doi.org/10.1109/asicon52560.2021.9620200
2021-01-01
Abstract:In this work, MEMS capacitive mirror structure was developed. CVD Amorphous Silicon (α-Si) was used as sacrificial layer. Because of higher reflectance and CMOS compatible consideration, α-Si was used as reflective layer on MEMS microbridge structure. After releasing, SEM was done to check the structure performance. The function of MEMS mirror array was then checked by applying voltage on the capacitor and recorded the optical image of the mirror array. The image change during applying and removing the voltage indicated that rotation of the mirror, and the measured current pulse indicated the charging process due to capacitance changing after rotation of the mirror.
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