Abstract:With the rapid development of information technology, various innovative computing architectures are leading the evolution of semiconductor chip technology. Due to the separation of memory and computation in traditional von Neumann architecture, the process of data transfer between memory and processor has given rise to a critical bottleneck that limits computing power and energy efficiency improvement in modern chips. Consequently, the development of high-efficient chip technology with storage-computing fusion architecture has drawn great attention from both academia and industry. In recent years, dedicated algorithmic acceleration chips based on complementary metal oxide semiconductor (CMOS) have experienced rapid growth, and playing an important role in basic numerical computing and emerging intelligent computing fields. One noteworthy task in basic numerical computing is polynomial regression calculation, which holds importance in information encryption, image processing and various other fields. Polynomial regression calculation entails a large number of multiplication operations which need massive multiplier resources in the field programmable gate array (FPGA) or graphics processing unit (GPU), resulting in huge hardware overhead and power consumption. To settle this issue, this paper develops a charge capture transistor based on indium gallium zinc oxide (InGaZnO, IGZO) channel. Leveraging the nonlinear characteristics of the device, the ternary multiplication operation is achieved in the analog domain by a single device. By applying the proposed transistor array, the sensitive parameter analysis of liver disease problem (a typical polynomial regression task) is effectively completed. In the emerging intelligent computing field, brain-inspired neural networks have garnered substantial attention for their ability to perform complex computation with low power consumption and reduced hardware cost. As one of the core components of brain-inspired neural networks, neurons possess the capabilities of nonlinear activation computing and spatiotemporal information integration computing. However, traditional CMOS technology struggles to efficiently adapt to brain-inspired neural networks due to their singular functionality and high hardware demands. To settle this issue, this paper develops an ion-gated neuromorphic transistor. Leveraging the synergistic regulation of top and back gates, the spatiotemporal information integration characteristic of neurons is achieved by a single device. Moreover, this paper proposes a correlation-based spiking neural network based on the spatiotemporal information integration characteristic of the transistor. The proposed design carries out the simulation of attention-shifting task, providing guidelines for the construction of novel brain-inspired neural network.

A Semi-Floating Gate Transistors In-Memory Computing Design with 40.14 TOPS/W for Matrix-Multiplication with Frequently Updated Weight.

A Low-Power In-Memory Multiplication and Accumulation Array with Modified Radix-4 Input and Canonical Signed Digit Weights

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

CSA-CiM: Enhancing Multi-Functional Computing-in-Memory with Configurable Sense Amplifiers

A reconfigurable in‐memory‐computation architecture with in‐situ update and shift capability

A FeFET-based Time-Domain Associative Memory for Multi-bit Similarity Computation

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

In-memory Multiplication Engine with SOT-MRAM Based Stochastic Computing

Monolithic 3D Integration of Analog RRAM-Based Fully Weight Stationary and Novel CFET 2T0c-Based Partially Weight Stationary for Accelerating Transformer

FAST: A Fully-Concurrent Access Technique to All SRAM Rows for Enhanced Speed and Energy Efficiency in Data-Intensive Applications

In-Memory Computing: Advances and Prospects

Research on Storage-Computing Fusion Transistors for Novel Computing Architectures

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

An 8.8 TFLOPS/W Floating-Point RRAM-Based Compute-in-Memory Macro Using Low Latency Triangle-Style Mantissa Multiplication

In-Memory Wallace Tree Multipliers Based on Majority Gates Within Voltage-Gated SOT-MRAM Crossbar Arrays

C 2 IM: A Compact Computing-In-Memory Unit of 10 Transistors with Standard 6T SRAM

Hadamard Product-Based In-Memory Computing Design for Floating Point Neural Network Training

A 28nm 8928Kb/mm 2 -Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM.

GCFP-ACIM: A 40nm 4.74TFLOPS/W General Complex Float-Point Analog Compute-in-Memory with Adaptive Power-Saving for HDR Signal Processing Applications

BafSP: Co-Design of Compute SRAM and Bit-Aware Data Flip Mitigation with In-Memory Sparsity Detection for SpMM

A 28-nm 64-kb 31.6-TFLOPS/W Digital-Domain Floating-Point-Computing-Unit and Double-Bit 6T-SRAM Computing-in-Memory Macro for Floating-Point CNNs