Interface Engineering of Metal-Oxide Field-Effect Transistors for Low-Drift pH Sensing

Huihui Ren,Kun Liang,Dingwei Li,Momo Zhao,Fanfan Li,Hong Wang,Xiaohe Miao,Taofei Zhou,Liaoyong Wen,Qiyang Lu,Bowen Zhu
DOI: https://doi.org/10.1002/admi.202100314
IF: 5.4
2021-01-01
Advanced Materials Interfaces
Abstract:Field-effect transistors (FETs) with nanoscale channels have emerged as excellent platforms for constructing high-sensitivity biosensors. However, in typical FET-based biosensors, the electronic perturbation at channel/electrolyte interfaces results in poor stability and severe signal drifts, making long-term continuous measurements quite challenging. To address this issue, here the dielectric/semiconductor interface is tailored by depositing an ultrathin layer of Al2O3 (approximate to 7 nm in thickness) on In2O3 FETs via solution-based processes. The results show that the Al2O3 dielectric layers effectively passivate the In2O3 channel and endow the device with low operation voltage (0.05 V), high sensitivity (61.9 mV pH(-1)), and low current drift (0.35 mV h(-1)) upon long-term and continuous pH monitoring. This work paves the way to real-time biosensing with high sensitivity, excellent stability, and low power consumption.
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