Effects Of Buffer Gas On N-Doped Graphene In A Non-Thermal Plasma Process

Zhongshan Lu,Cheng Wang,Xianhui Chen,Ming Song,Weidong Xia
DOI: https://doi.org/10.1016/j.diamond.2021.108548
IF: 3.806
2021-01-01
Diamond and Related Materials
Abstract:A non-thermal plasma process based on a magnetically stabilized gliding arc discharge (MSGAD) at atmospheric pressure is developed for the synthesis of nitrogen-graphene nano-flakes (N-GNFs). Using propane as a precursor, N-GNFs with low relative amounts of bonded oxygen, large specific surface area (200-500 m(2)/g) and nitrogen doping level of 1-3% are produced by adjusting the buffer gas of the reaction system. N-doping is confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental CNHSO analysis. The effects of buffer gas on N-GNFs are investigated. It is found that the nitrogen configuration is always dominated by pyrrolic nitrogen. A high nitrogen flow rate with a total flow rate constant promotes a higher doping level of N, but more defects appear. The addition of NH3 or H-2 further increases the nitrogen doping level, and eliminates some defects. Different buffer gases lead to different types and concentrations of active species, which is a key factor in the synthesis of nitrogen-doped graphene.
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