Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Optically pumped low threshold InAs/GaAs quantum-dot micropillar laser on Si (001) hollow substrate

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

1.9 μm hybrid silicon/iii-v semiconductor laser

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Nanopillar lasers directly grown on silicon with heterostructure surface passivation.

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Tunable Quantum Dot Lasers Grown Directly on Silicon

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

GaAs/AlGaAs quantum cascade lasers

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Low-threshold lasing of optically pumped micropillar lasers with Al$_{0.2}$Ga$_{0.8}$As/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflectors

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm