Interface Connection Modulation by Cu X S Buffer Layer on Charge Transfer Performance Enhancement of CuInS 2 Quantum Dot-Sensitized Solar Cells

Wang Meng,Peng Zhuoyin,Ning Zuoqiu,Chen Jianlin,Li Wei,Chen Jian,Huang Dong

DOI: https://doi.org/10.1557/s43578-021-00274-7

2021-01-01

Abstract:Cu x S thin films are employed as a buffer layer between TiO 2 electronic layer and CuInS 2 optical absorption layer for the TiO 2 /CuInS 2 quantum dot-sensitized solar cells, which are anticipated to improve the interface connection of the photoelectrodes. The optical absorption spectra and photoluminescence spectra of different photoelectrodes are investigated, which have exhibited the improvement on the optical absorption and charge separation properties of the TiO 2 /CuInS 2 -based photoelectrodes under Cu x S buffer layer. The influence on the thickness of Cu x S buffer layer is also optimized to obtain an excellent interface connection in the solar cells system. And the TiO 2 /CuInS 2 quantum dot-sensitized solar cells obtain better charge transfer property by the introduction of Cu x S buffer layer, which can effectively increase the open-circuit voltage and short-circuit current density values of the solar cells, achieving photovoltaic conversion efficiency enhancement from 2.57 to 3.06%. Graphic abstract