Effective carrier transport tuning of CuOx quantum dots hole interfacial layer for high-performance inverted perovskite solar cell
Yuhui Ma,Yewei Zhang,Heyi Zhang,Hao Lv,Ruiyuan Hu,Wei Liu,Songle Wang,Mao Jiang,Liang Chu,Jian Zhang,Xing'ao Li,Ruidong Xia,Wei Huang
DOI: https://doi.org/10.1016/j.apsusc.2021.149117
IF: 6.7
2021-05-01
Applied Surface Science
Abstract:<p>Interfacial layer is deemed as an efficient approach to align the energy level and reduce the carrier recombination at the interfaces. Therefore, for the first time, a facile yet effective method to enhance carrier transport by copper oxide quantum dots (CuO<sub>x</sub> QDs) interfacial layer in inverted perovskite solar cells (PSCs) is developed. The high mobility of CuO<sub>x</sub> QDs interfacial layer could boost the performance of PSCs by providing a better electrical carrier transport. Furthermore, the higher crystallinity of perovskite layer on CuO<sub>x</sub> QDs layer reduced the charge trap state densities, which leads to an increase in carrier recombination resistance. As a result, our inverted PSCs exhibit a power conversion efficiency (PCE) of 19.91%, a 14.6% increment compared with the PCE of a control device. Our finding demonstrates the promise of enhancing carrier transport by interfacial layer for high-performance PSCs and expands choice of interfacial layer materials in PSCs.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films