Effects of Post-Annealing on Crystalline and Transport Properties of Bi2Te3 Thin Films*

Qi-Xun Guo,Zhong-Xu Ren,Yi-Ya Huang,Zhi-Chao Zheng,Xue-Min Wang,Wei He,Zhen-Dong Zhu,Jiao Teng

DOI: https://doi.org/10.1088/1674-1056/abee6c

2021-01-01

Chinese Physics B

Abstract:A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi2Te3 films with the carrier density down to 4.0 × 1013 cm−2. In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi2Te3 thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi2Te3 thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length (∼228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi2Te3 thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.