Abstract:A multi‐functional platform is fabricated entirely from 2D ferroelectric semiconductor α‐In2Se3 integrated with three functions: i) Highly distinguishable optoelectronic demodulation; ii) Reconfigurable non‐volatile optoelectronic logic gates; iii) Visual information preprocessing with gate voltage modulation. The platform can respond to the lights in visible to infrared (up to 1800 nm) range. The optical‐engineered ferroelectric polarization switch behavior is observed. 2D layered semiconductors with excellent light−matter interaction and atomic‐scale thickness have been envisioned as promising candidates for more than Moore and beyond Moore technologies. Here, for the first time, a multi‐functional platform is reported that is fabricated entirely from wrinkle‐free 2D ferroelectric semiconductor α‐In2Se3 integrated with a photodetector, reconfigurable logic switching, and visual perception processing functions. The intensity‐ and wavelength‐dependent resistance is used to demodulate broadband optical information into electrical signals and perform reconfigurable logic switching. Moreover, the platform offers dynamically modulated photosensitive visual sensing in different working modes at the pixel level. Using photo‐assisted piezoresponse force microscopy, the optical‐engineered ferroelectric polarization switch behavior is explored. The platform has excellent sensitivity to both optical and electrical stimuli and can respond to lights in the visible to short‐wavelength infrared region in volatile/non‐volatile manner under gate voltage modulation, with a response of 98 mA W−1 (to 1800 nm light), a current on/off ratio of over 106, and a high field‐effect mobility of 137.55 cm2 V−1 s−1. With its simple structure, unique photoelectric interaction, and controllable operating mechanism, the platform has the potential to simplify the complexity of neuromorphic computing circuitry systems, paving the way for high‐performance hybrid technologies suitable for artificial intelligence applications.

Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures

Optoelectronic Ferroelectric Domain‐Wall Memories Made from a Single Van Der Waals Ferroelectric

Thin film ferroelectric photonic-electronic memory

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Nonvolatile Ferroelectric Field-Effect Transistors.

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces

Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory

Multi‐Functional Platform for In‐Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α‐In2Se3

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

Ferroelectric Domain Wall Memory and Logic

Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

Solid-Ionic Memory in a van der Waals Heterostructure

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

Multilevel nonvolatile photomemory with long-term robust optical retention based on photoinduced depolarization

Reconfigurable Optical Memory Based on MoS2/QDs Mixed-Dimensional Van Der Waals Heterostructure

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory