XAFS Study on the Temperature-Dependent Occupation Sites of Co Codopants in (co, Cu)-codoped ZnO Films

Fengchun Hu,Shibao Zhang,Zhiyun Pan,Wensheng Yan,Qinghua Liu,Tao Yao,Shiqiang Wei
DOI: https://doi.org/10.1088/1742-6596/712/1/012107
2016-01-01
Journal of Physics Conference Series
Abstract:Elemental codoping has been an effective way to regulate the structural and electronic properties of semiconductors. By using x-ray diffraction and x-ray absorption fine structure spectroscopy, we investigate the local structure and spatial occupations of Co dopants in Cu-doped ZnO thin films prepared by pulsed-laser deposition method. It is revealed that the Co dopants are substantially incorporated into ZnO matrix when the deposition temperature is increased up to 650 °C, although the preferential orientation of ZnO film is changed. The results provide experimental guidance in the synthesis of the co-doped ZnO based dilute magnetic semiconductors.
What problem does this paper attempt to address?