Zn1-xCoxO Film Valence by Photoelectron Spectroscopy

Yingzi Peng,Dexuan Huo,Liping Zhu
DOI: https://doi.org/10.1088/1742-6596/263/1/012018
2011-01-01
Journal of Physics Conference Series
Abstract:The Co-doped ZnO film was fabricated using a pulsed laser deposition method on a C-sapphire substrate. The structural properties of the Co-doped ZnO film and the chemical states of elements have been studied in this paper. The XRD and HRTEM characterization results show that it is wurtzite structure with the C-axis of the film aligned with that of the substrate without obvious precipitation. Furthermore the experimental results probably reveal the occupation of Co ions at Zn sites in the host lattice. The oxygen ions are lying in metal oxide, which are due to O - Zn(Co) bonds, though a few oxygen deficiencies and oxygen vacancies were also detected. Co ions have replaced part of Zn sites in the host lattice, resulting in Co - O bonds and no obvious precipitate was detected in the film under our experimental conditions. The substituted Co ions are in the 2+ oxidation state. The electronic-structure parameters Delta, U are also induced.
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