Abstract:Mg x Zn 1 − x O (x≈0.19) films were, respectively, deposited by reactive sputtering on the heavily arsenic-doped (n+), lightly phosphorus-doped (n−), heavily boron-doped (p+), and lightly boron-doped (p−) silicon substrates. The sputtered MgxZn1−xO films were n-type with an electron concentration of 4.1×1017cm−3. Moreover, the energy-band gap of the MgxZn1−xO films was determined to be ∼3.67eV. The MgxZn1−xO∕n−-Si and MgxZn1−xO∕p−-Si heterojunctions showed rectifying behavior to different degrees while the MgxZn1−xO∕n+-Si and MgxZn1−xO∕p+-Si heterojunctions did not possess rectifying function. The MgxZn1−xO∕n+-Si heterojunction exhibited UV near-band-edge and visible defect-related electroluminescence (EL) under the forward bias but only visible EL under reverse bias; while the MgxZn1−xO∕n−-Si heterojunction only emitted relatively weak UV and visible EL under the forward bias. On the other hand, the MgxZn1−xO∕p+-Si heterojunction was electroluminescent in the visible region under the forward bias while in both the UV and visible regions under the reverse bias; and the MgxZn1−xO∕p−-Si heterojunction did not exhibit detectable EL under either forward or reverse bias. The mechanisms of the EL and carrier transport for the above-mentioned heterojunctions have been tentatively explained in terms of their energy-band structures.

Manipulation Of Reverse Bias Transport By Photocarrier Injection In Pr0.7ca0.3 Mno3-Delta/Sio2/Si Heterojunction

Manipulation of reverse bias transport by photocarrier injection in Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3−δ</sub>/SiO<sub>2</sub>/Si heterojunction

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Bias-dependent Rectifying Properties of N-N Manganite Heterojunctions La1−xCaxMnO3/SrTiO3:Nb (X=0.65–1)

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Transport Properties and Backward Diode-Like Behaviour in Manganite-Based P–i–n Junctions

Magnetically and Electrically Tunable Transport Property of the Heterojunction Composed of La0.9Ca0.1MnO3+δand Nb-doped SrTiO3

Rectifying Behaviours of Heterojunctions Composed of Manganites with Different Resistive Properties

Manipulating metal-to-insulator transition temperature in manganite–titanate junction by reverse electrical bias

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Rectifying Behavior and Photoinduced Characteristic in La‐doped BaSnO3/p‐Si Heterojunctions

Electronic Transport and Magnetoresistance in Ultrathin Manganite-Titanate Junctions

Electronic Transport and Magnetoresistance of A Heterojunction Composed of La0.7ce0.3mno3 and 1 Wt% Nb-Doped Srtio3

Forward And Backward Diodelike Rectifying Properties Of The Heterojunctions Composed Of La1-Xsrxcoo3-Delta And 0.7 Wt % Nb-Doped Srtio3

Temperature Dependent Transport and Photoresponse Properties of A Mn-Doped Zno/P-Si Heterojunction

Influence of Photocarriers to Silicon Optical Modulator Based on Reverse-Biased Pn Diode at 1550 Nm Wavelength

Controllable Design of Minority Carrier Diffusion in Npn Devices for Enhancing Er3+-Related Electroluminescence

Backward diodelike behavior in La0.67Ca0.33MnO3−δ∕SrTiO3∕Nb–SrTiO3 p-i-n junction

Interfacial Potential in La1−xCaxMnO3∕SrTiO3:Nb Junctions with Different Ca Contents

Photocarrier Injection and Current-Voltage Characteristics of a La0.8Sr0.2MnO3/SrTiO3:Nb Heterojunction at Low Temperature