Abstract:<p>The outstanding physical properties of 2D materials have sparked continuous research interest in exploiting these materials for next‐generation high‐performance electronic and photonic technology. Scalable synthesis of high‐quality large‐area 2D hexagonal boron nitride (h‐BN) is a crucial step toward the ultimate success of many of these applications. In this work, a synthetic approach in which secondary recrystallized Ni (100) substrates underwent a carburization process, followed by the growth of h‐BN in a molecular beam epitaxy system is designed. The h‐BN growth dynamics is studied by tuning different growth parameters including the substrate temperature, and the boron and nitrogen source flux ratio. With assistance from density functional theory calculations, the role of interstitial C atoms in promoting h‐BN growth by enhancing the catalytic effect of the transition metal, which lowers the nucleation activation energy barrier, is rationalized. Through the control of the growth parameters, a single‐crystal h‐BN monolayer domain as large as 1.4 mm in edge length is achieved. In addition, a high‐quality, continuous, large‐area h‐BN single‐layer film with a breakdown electric field of 9.75 MV cm<sup>−1</sup> is demonstrated. The high value of the breakdown electric field suggests that single‐layer h‐BN has extraordinary dielectric strength for high‐performance 2D electronics applications.</p>

A Comprehensive Investigation on CVD Growth Thermokinetics of H-Bn White Graphene

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride

Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors.

Effect of Flow Rate and Precursor Sublimation Temperature on the LPCVD Growth of Hexagonal Boron Nitride

Understanding vapor phase growth of hexagonal boron nitride

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

Nucleation and Growth of Single Crystal Graphene on Hexagonal Boron Nitride

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Rapid and catalyst-free CVD growth of graphene on hBN

Progress in CVD synthesis of layered hexagonal boron nitride with tunable properties and their applications

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Large Scale Graphene/h-Bn Heterostructures Obtained by Direct CVD Growth of Graphene Using High-Yield Proximity-Catalytic Process

Hexagonal Boron Nitride on III-V Compounds: A Review of the Synthesis and Applications

Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene