Deposition Of A-Si : H Photoconductor Layer For Lclv By Pecvd

Qi Kangcheng,Cheng Jianbo,Ge Changjun,Wang Jimin
2004-01-01
Abstract:Photo-addressed Liquid Crystal Light Valves (LCLVs) are devices capable of wavelength conversion, of in-coherence to coherence light conversion, of image amplifier and therefore have applications in optical processing and correlation and in projection displays. A-Si:H photoconductor layer is the optical address layer in the LCLVs. In this paper A-Si:H photoconductor layers deposited by plasma enhanced chemical vapor deposition (PECVD) were investigated. To ensure high dark resistivity and dark to fight resistivity ratio, the deposition conditions were optimized. As the result, with the optimized depositions and slightly doped the a-Si:H photoconductor layer with boron, high dark resistivity of great than 10(11) Omega center dot cm and high photo to dark resistivity ratio had been achieved. The peak responsive wavelength of the photoconductor layer and LCLV is around 700 nm.
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