Abstract:A brief overview is given on several aspects of applications of the Monte Carlo (MC) simulation method to surface-related electron spectroscopy and microscopy. For the MC modeling of electron interaction with solids, the electron inelastic scattering cross section is calculated by the use of bulk dielectric function with optical constants in a dielectric functional approach. This has enabled the systematic reproductions of the experimental energy distributions of backscattered electrons for a number of elemental materials. An improved calculation of backscattering factor for quantitative AES analysis has been performed on the basis of a new definition and by making use of the up-to-date relevant cross sections. The physical reason is given for the backscattering factor that can be less than unity for very low primary energies close to the ionization energy and/or for large incident angles. For the MC modeling of electron interaction with surfaces, the inelastic scattering of electrons moving in a surface region is treated in a self-energy formalism. The model has enabled the evaluation of the surface excitation effect through the calculation of position-dependent electron IMFP. A simulation of REELS spectra for Ag is compared with an experiment; a reasonable agreement found on the surface plasmon peak intensity normalized with elastic peak intensity thus verifies this modeling of electron interaction with surfaces. Finally, the MC simulation code has been extended to deal with complex sample geometries. By using basic building blocks to construct a complex geometry and the ray-tracing technique for correction of electron flight-step-length sampling, the structured and/or inhomogeneous sample can be modeled with reasonable flexibility. Copyright (C) 2006 John Wiley & Sons, Ltd.

Simulation Research on Scattering Characteristics of Incident Electron under Uniform Doping of EBCMOS Substrate

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Numerical simulation research and applications on scattering imaging of surface defects on optical components

Monte Carlo Simulation Study of Quasi-Elastic Electron Scattering from an Overlayer/Substrate System

Analysis and Research on Monte Carlo Simulation of the Low-Energy Electron Beam Lithography Process

Studies of energy dissipation distribution in low-energy electron beam lithography by Monte Carlo method

Theoretical Study Of Low-Energy Electron Penetration In Resist-Substrate Target By Monte Carlo Simulation

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Analysis of finite-size coated electromagnetic bandgap structure by an efficient scattering matrix method

A universal gain theory of the multiplying layer in EBCMOS based on elastic and inelastic scattering

Particle Scattering Field Calculation and Analysis Based on Mie Scattering Theory

Simulation and Analysis of Low-Energy Electron Beam Lithography on Topographical Substrates

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Monte Carlo simulation for low-energy electron lithography

Development of an Integrative Electromagnetic Simulation Software

A New Simulation Method for 3-D Electron Beam Lithography

The Analysis Of Electron Scattering Among Multiplying Layer In Ebaps Using Optimized Monte Carlo Method

Monte Carlo Simulation Study of Electron Interaction with Solids and Surfaces

Simulation of Electron Solid Interaction and Its Application to Quantitative-Analysis by Auger-Electron Spectroscopy

Monte Carlo Calculation of Electron Rutherford Backscattering Spectra and High-Energy Reflection Electron Energy Loss Spectra

Monte Carlo Simulation of Cd-Sem Images for Linewidth and Critical Dimension Metrology