Evidence for Topological Edge States in a Large Energy Gap Near the Step Edges on the Surface of ZrTe_{5}

R. Wu,J. -Z. Ma,S. -M. Nie,L. -X. Zhao,X. Huang,J. -X. Yin,B. -B. Fu,P. Richard,G. -F. Chen,Z. Fang,X. Dai,H. -M. Weng,T. Qian,H. Ding,S. H. Pan
DOI: https://doi.org/10.1103/physrevx.6.021017
2016-01-01
Physical Review X
Abstract:Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe5 crystal hosts a large full gap of similar to 100 meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states.
What problem does this paper attempt to address?