Abstract:The prospect of employing nanophotonic methods for controlling photon–electron interactions has ignited substantial interest within the particle accelerator community. Silicon-based integrated dielectric laser acceleration (DLA) has emerged as a viable option by leveraging localized photonic effects to emit, accelerate, and measure electron bunches using exclusively light. Here, using highly regular nanopatterning over large areas while preserving the crystalline structure of silicon is imperative to enhance the efficiency and yield of photon-electron effects. While several established fabrication techniques may be used to produce the required silicon nanostructures, alternative techniques are beneficial to enhance scalability, simplicity and cost-efficiency. In this study, we demonstrate the nano-synthesis of silicon structures over arbitrarily large areas utilizing exclusively deep ultraviolet (DUV) ultrafast laser excitation. This approach delivers highly concentrated electromagnetic energy to the material, thus producing nanostructures with features well beyond the diffraction limit. At the core of our demonstration is the production of silicon laser-induced surface structures with an exceptionally high aspect-ratio -reaching a height of more than 100 nm- for a nanostructure periodicity of 250 nm. This result is attained by exploiting a positive feedback effect on the locally enhanced laser electric field as the surface morphology dynamically emerges, in combination with the material properties at DUV wavelengths. We also observe strong nanopattern hybridization yielding intricate 2D structural features as the onset of amorphization takes place at high laser pulse fluence. This technique offers a simple, yet efficient and attractive approach to produce highly uniform and high aspect ratio silicon nanostructures in the 200–300 nm range.

In-Situ Pulsed Laser Interference Nanostructuring of Semiconductor Sur-faces

Direct Patterning of Periodic Semiconductor Nanostructures Using Single-Pulse Nanosecond Laser Interference

Precise Arrays of Epitaxial Quantum Dots Nucleated by in Situ Laser Interference for Quantum Information Technology Applications

In-situ Laser Interference Patterning of MBE Growth Surfaces

Directed Self-Assembly of InAs Quantum Dots Using in Situ Interference Lithography

Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Fabrication of Sub-Micrometer Periodic Nanostructures Using Pulsed Laser Interference for Efficient Light Trapping in Optoelectronic Devices

Periodic Microstructures Fabricated by Laser Interference with Subsequent Etching

Thermodynamic Processes on a Semiconductor Surface During In‐situ Multi‐beam Laser Interference Patterning

Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning

Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics

Femtosecond Laser Nanostructuring on a 4H-Sic Surface by Tailoring the Induced Self-Assembled Nanogratings

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Laser nano-fabrication inside silicon with spatial beam modulation and non-local seeding

Surface Nanostructuring Via Femtosecond Lasers

Periodic surface micro-nanostructures on GaN films induced by femtosecond laser irradiation

Periodic nanohole array structure induced on a silicon surface by direct writing with a femtosecond laser

Highly uniform silicon nanopatterning with deep-ultraviolet femtosecond pulses

Cylindrically Focused Nonablative Femtosecond Laser Processing of Long‐Range Uniform Periodic Surface Structures with Tunable Diffraction Efficiency

Laser Direct Writing for Micromachining of Freeform Surface on n-Type GaAs via Photoelectrochemical Etching