An Rf Power Amplifier with Inter-Metal-Shuffled Capacitor for Inter-Stage Matching in A Digital Cmos Process

Feng Xiaoxing,Zhang Xing,Ge Binjie,Wang Xin'An

DOI: https://doi.org/10.1088/1674-4926/30/6/065001

2009-01-01

Journal of Semiconductors

Abstract:One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available,especially no high density capacitor.To address this problem,a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process.This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal(MIM) capacitor regarding their capacitor density.Detailed simulations are carried out for the leakage,the voltage dependency,the temperature dependency,and the quality factor between an inter-metal shuffled(IMS) capacitor and an MIM capacitor.Finally,an IMS capacitor is chosen to perform the inter-stage matching.The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application.The PA occupies 370 × 200 μm2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.