A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

Gao Tongqiang,Zhang Chun,Chi Baoyong,Wang Zhihua
DOI: https://doi.org/10.3321/j.issn:0253-4177.2008.06.005
2008-01-01
Journal of Semiconductors
Abstract:Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modula-tion is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier (PA),a modula-tor, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output 1dB power of 17.6dBm while maintaining a maximum PAE of 35.4%.
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