Abstract:Silicon-based complementary metal-oxide-semiconductor (CMOS) has been the mainstream logic style for modern digital integrated circuits (ICs) for decades but will meet its performance limits soon. Extensive investigations have thus been carried out using other semiconductors, especially those with extremely high carrier mobility. However, these materials usually have small or even zero band gap, which leads inevitably to large leakage current or voltage loss in ICs based on these semiconductors. In this work, we propose and demonstrate a strengthened CMOS (SCMOS) logic style using modified field-effect transistors (FETs) to solve this problem, that is, to achieve high performance, utilizing the high carrier mobility in these materials, and to reduce the current leakage resulting from their small band gap. Conventional CMOS FETs are modified to have an asymmetric structure where an additional assistant gate is introduced near the drain to further lower the potential barrier in on-state and to increase the barrier in off-state. SCMOS ICs are constructed using these modified asymmetric CMOS FETs, which demonstrate perfect rail-to-rail output with negligible voltage loss and 3 orders of magnitude suppression of the static power consumption and an operating speed similar to or even higher than that of CMOS ICs. Here, SCMOS is demonstrated using carbon nanotubes, but, in principle, this logic style can be used in ICs based on any small-band-gap semiconductors to provide simultaneously high performance and low power consumption.

Novel Mixed-Voltage I/O Buffer with Thin-Oxide Cmos Transistors

A novel mixed-voltage I/O buffer with low-voltage thin-oxide CMOS transistors

A New Design of Mixed-Voltage I/O Buffers with Low-Voltage-thin-oxide CMOS Process

Design Analysis of Novel Substrate-Triggered GGNMOS in 65nm CMOS Process

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

High-Speed Low-Power Rail-to-Rail Buffer using Dynamic-Current Feedback for OLED Source Driver Applications

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Improvement on the Performance of III-V Channel Based Ultra-Thin Junction-Less-Hybrid CMOS Circuits with Mixed Mode Analysis

2-Ghz 2×VDD 28-Nm CMOS Digital Output Buffer with Slew Rate Auto-Adjustment Against Process and Voltage Variations

High Voltage SOI SJ-LDMOS with Dynamic Buffer

ESD Protection for mixed-voltage I/O Interfaces Based on STNMOS

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

A Capacitive Boosted Buffer Technique for High-Speed Process-Variation-tolerant Interconnect in UDVS Application

Analysis and Design of a Buffer for High Performance LDO

A High Performance Low-Dropout Regulator with a Novel Buffer

A Sub-100mV Ultra-Low Voltage Level-Shifter Using Current Limiting Cross-Coupled Technique for Wide-Range Conversion to I/O Voltage

Class-AB CMOS Buffer with Floating Class-Ab Control.

Design of a Low Voltage Class-AB CMOS Super Buffer Amplifier with Sub Threshold and Leakage Control

23-4: High-Slew-Rate Low-Static-Power Dynamic-Bias Rail-to-Rail Output Buffer for OLED-on-Silicon VR Microdisplay

Optimization of CMOS Tapered Buffer Using Variable-to-Fixed Ratio Method

A High Voltage Bi-Cmos Compatible Buffer Super-Junction Ldmos with an N-Type Buried Layer