Abstract:This study delves into temperature‐ and carrier‐dependent surface recombination at silicon/dielectric interfaces within the 25–90 °C range, employing an advanced technique. This approach offers many unique capabilities, notably separating chemical passivation and charge‐assisted population control and extracting fixed charges in the dielectric layers, the bulk lifetime, and the temperature‐dependent capture cross sections of electrons and holes. Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature‐ and carrier‐dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge‐assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.

The Effect of Surface Recombination on Surface Photovoltage in Semiconductors

Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells

Effect of Surface Recombination and Injection Level on the Diffusion Length Obtained by Simulation of the Spv Method

On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications

Surface saturation current densities of perovskite thin films from Suns‐photoluminescence quantum yield measurements

Surface Saturation Current Densities of Perovskite Thin Films from Suns-Photoluminescence Quantum Yield Measurements

Dynamical Nonlinear Inversion of the Surface Photovoltage at Si(100)

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Quantitative o perando visualization of the energy band depth profile in solar cells

A Numerical Model of P–n Junctions Bordering on Surfaces

Analytical Model for Current-Voltage Characteristics in Perovskite Solar Cells Incorporating Bulk and Surface Recombination

Voltage-Induced Inversion of Band Bending and Photovoltages at Semiconductor/Liquid Interfaces

The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study

Influence of interfacial recombination on hysteresis in the J-V curves of TiO2/MAPbI3/Spiro-OMeTAD solar cells

Observation of Bimolecular Recombination in High Mobility Semiconductor Bi2O2Se Using Ultrafast Spectroscopy

Steady-state distributions of carrier concentration and recombination rates in a solar cell under operating conditions