Abstract:Recent technical advances in scanning transmission electron microscopy (STEM) and xray detector technology have made it possible to perform atomic-resolution chemical mapping using energy-dispersive x-ray spectroscopy (EDS) [1]. This ability allows for establishing a direct correlation between atomic-scale STEM images, such as high-angle annular dark-field (HAADF) images, and atomic-scale chemical EDS images, making chemical quantification of interfaces, defects and crystalline structure at the atomic-scale possible. Using these capabilities, we have lately quantified the chemical composition of an epitaxial (La0.7Sr0.3)MnO3 (LSMO)/BiFeO3 (BFO) quantum structure [2], cation occupancy in a Sm-doped SrTiO3 (STO) thin film and antiphase boundaries present within STO films [3], as well as determined structures of several intermetallic alloys [4]. In this study, we describe further use of these capabilities to quantify atomic-scale interdiffusion in self-assembled, vertically aligned nanocomposite (VAN) thin films. Self-assembled VAN thin films, consisting of two immiscible components heteroepitaxially grown on single crystals, have experienced an increase in research activity in recent years [5]. These structures offer the advantage of utilizing the functionalities of both components with the possibility of tuning the material’s properties by tailoring the volume ratio of the two components, the interface-to-volume ratio and hetero-epitaxial strain. In addition, modification of interface properties such as structural and elemental distribution across the interface offers an additional dimension to generate new properties and functionalities. The atomic-scale characterization of the interface plays an essential role in understanding the structure-property relationships. Here we describe the characterization of NiO:LSMO and ZnO:LSMO VAN thin

Displacement separation analysis from atomic-resolution images.

Axial nano-displacement measurement with high resolution and wide range based on asymmetrical illumination.

Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Atomic Mapping of Structural Distortions in 109° Domain Patterned BiFeO3 Thin Films

Decomposition of the Transformation Displacement Field

Detection of dislocation motion in atomistic simulations of nanocrystalline materials

Atomic-Scale Measurement of Flexoelectric Polarization at SrTiO_{3} Dislocations.

Identification of Dislocations on Crystal Surfaces

Measuring the Burgers Vector of Dislocations with Dark-Field X-ray Microscopy

Automatic and accurate determination of atom peak location in high-resolution electron microscopy image and fast visualization of polarization domains

Direct Observation of Local Chemistry and Local Cation Displacements in the Relaxor Ferroelectric PMN-PT

The origin of atomic displacements in HAADF images of the tilted specimen

Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps

A coherent way to image dislocations

The Characterization of Complex Polarization State in Ferroelectric Materials using Scanning Convergent Beam Electron Diffraction

Harnessing dislocation motion using an electric field

Artifactual atomic displacements on surfaces using annular dark-field images with image simulation

Atomic-scale EDS Mapping for Chemical Imaging and Quantification of Interdiffusion in Self-assembled Vertically Aligned Nanocomposite Thin Films

Aberration-corrected Z-contrast Imaging of SrTiO3 Dislocation Cores.